Fig. 2 | Nature Communications

Fig. 2

From: Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Fig. 2

Characterization of two-dimensional hexagonal-boron nitride (2D-BN). a Scanning tunneling microscopy image (VTip = −0.5 V) and b fast Fourier transform (FFT) image of 2D-BN on highly oriented pyrolytic graphite (HOPG). The dashed circles highlight the points of the FFT pattern. c Scanning tunneling spectroscopy spectra collected from 2D-BN and HOPG (set point: VTip = 3.0 V, ITip = 48 pA). d Optical image and e Tauc plot (inset: ultraviolet spectrum) of 2D-BN grown on quartz. f Schematic illustration, g top view scanning electron microscope (SEM), h side view SEM, and i cross-section transmission electron microscope (TEM) image of 2D-BN grown by near-equilibrium plasma-enhanced chemical vapor deposition (ne-PECVD) on SiO2/Si with three-dimensional structures. j The higher magnified TEM image of the areas indicated in i by a dashed frame. The scale bars are 2 nm in a, 10 μm in g, 2 μm in h, 200 nm in i, and 5 nm in g

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