Fig. 4 | Nature Communications

Fig. 4

From: Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Fig. 4

Direct growth of CVD-WSe2 on two-dimensional hexagonal-boron nitride (2D-BN). a Atomic force microscope image of a CVD-WSe2 crystal grown on 2D-BN. b High-resolution transmission electron microscope image and c selected area electron diffraction patterns of a CVD-WSe2 crystal. The (100) plane space is 0.28 nm. d Raman spectra of a CVD-WSe2 crystal grown on 2D-BN or on bare SiO2/Si. The full width at half maxima (FWHM) of the E12g band is 5.7 and 12.3 cm−1, respectively. e Photoluminescence spectra of the CVD-WSe2 grown on 2D-BN or on bare SiO2/Si. The FWHM of the peak is 49 and 54 meV, respectively. The scale bars are 5 μm in a and 2 nm in b

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