Fig. 6 | Nature Communications

Fig. 6

From: Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Fig. 6

Scanning thermal microscope (SThM) measurement of the interfacial thermal dissipation. a–d SThM thermal images of a WSe2 on 2D-BN/SiO2/Si, b WSe2 on SiO2/Si, c MoSe2 on 2D-BN/SiO2/Si, and d MoSe2 on SiO2/Si. e The cross-sectional profiles where temperature changes (∆T) are recorded across the 2D-BN/SiO2/Si surface or the WSe2, MoSe2 edges along the dashed lines in a–d. f The histograms show the ∆T change across the WSe2 or MoSe2 edge on 2D-BN/SiO2/Si or SiO2/Si. Scale bars in a–d are 1 μm

Back to article page