Fig. 7 | Nature Communications

Fig. 7

From: Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Fig. 7

Differential 3ω measurement and molecular dynamics (MD) simulation of the interfacial thermal resistance. a Optical image of a CVD-WSe2 device for differential 3ω measurement. b Schematic images of the devices for 3ω measurement, in which Au/Cr is used as both the Joule heat source (current with a frequency of w) and the detection electrode (electrical signal with a frequency of 3w). c T2ω vs. ln ω for CVD-WSe2/SiO2 (red solid), CVD-WSe2/2D-BN/SiO2 (red open), CVD-MoSe2/SiO2 (blue solid), and CVD-MoSe2/2D-BN/SiO2 (blue open) interfaces. d T2ω vs. ln ω for WSe2/2D-BN/SiO2 interface. The 2D-BN/SiO2 substrate was prepared by ne-PECVD (black) or transferring CVD 2D-BN on SiO2/Si (red). e WSe2/2D-BN/SiO2 hybrid system used in MD simulation. f The effect of the substrate roughness (Ra) on the interfacial thermal resistance (Rth) for WSe2/SiO2 and WSe2/2D-BN/SiO2 hybrid systems from MD simulation. The scale bar in a is 20 μm

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