Fig. 3

Structure, energy-level alignment, and performance of HPVKSC. a Schematic diagram of the device structure in this work: FTO/NiMgLiO/PVK/PCBM/BCP/Bi/Ag; the Bi interlayer has a superior shielding capability, prohibiting both inward and outward permeation. b Energy level diagram and c SEM cross-sectional image of the device (scale bar: 500 nm). d J–V curves of a typical large-area (1 cm2) HPVKSC with a 20-nm Bi interlayer based on a MAPbI3 absorber, with the stabilized PCE measured at 0.872 V as the inset. Source data are provided as a Source Data file