Fig. 3
From: Nonlinear magnetotransport shaped by Fermi surface topology and convexity
Crystal anisotropy of nonlinear magnetoresistance. a Optical image of a circular Hall bar device with a flake thickness of 13.6 nm with arrows indicating the a and b directions. b Temperature dependence of the channel resistivity ρ along different crystallographic directions. c, d Temperature dependence of the nonlinear magnetoresistance R2ω (at φ = 270°) normalized under unit current and magnetic field (c) and normalized under unit electric voltage and magnetic field (d) along different crystallographic orientations
