Fig. 2
From: Free radical sensors based on inner-cutting graphene field-effect transistors

Detection performance and mechanism of the field-effect transistor (FET) sensor. a Schematic diagram of the •OH detection. b Liquid gate transfer curves of a FET device of pristine graphene (black), after step iii (red), after step iv (10−4 M Cd2+, green), and after step v (10−4 M •OH, blue), when liquid gate voltage (Vlg) varies from −400 to 800 mV. c, d Real-time electrical responses of a graphene/Au/Cys-PP FET device upon successive addition of 1 × 10−5 M Cd2+ (step iv) and subsequent 1 × 10−4 M •OH (step v). e Selectivity of a graphene/Au/Cys-PP-Cd2+ FET sensor (modified in 10−4 M Cd2+) toward •OH (10−6 M) and metal ions (Na+, K+, Ca2+, Mg2+, Fe2+, Mn2+, Co2+, Fe3+, Ag+, Zn2+, Cu2+, Pb2+, Ni2+, 10−6 M). f Selectivity of a graphene/Au/Cys-PP-Cd2+ FET sensor (modified in 10−4 M Cd2+) toward •OH (10−6 M) and other reactive oxygen species (H2O2, ROO−, 1O2, ClO−, O2•−, phosphate-buffered saline, 10−6 M). g The response of a pristine graphene channel (without modification) upon successive addition of 1 × 10−4 M •OH. The error bars are defined by the standard deviation of the results from three parallel experiments