Fig. 4
From: Free radical sensors based on inner-cutting graphene field-effect transistors
Quasi-quantitative detection of •OH. a–c Real-time response upon various concentrations of •OH (from 10−7 to 10−4 M) for the field-effect transistor (FET) sensors with channel doped with a 10−6 M Cd2+, b 10−5 M Cd2+, or c 10−4 M Cd2+. d, e Schematic diagram of the detection of •OH using the FET sensors modified by different concentrations of Cd2+. f Real-time response upon successive addition of 10−5 M •OH for the FET sensors with channel doped with 10−5 M Cd2+ (black, Device A) and 10−4 M Cd2+ (red, Device B)
