Fig. 5
From: Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
Photodetection of single In0.28Ga0.72Sb nanowire (532 nm laser). a Current–voltage curves under the illumination intensities of 0.5 and 1.6 mW mm−2, respectively. b Photocurrent and responsivity as a function of the incident illumination intensity. c Photoresponse of the nanowire photodetector under the illumination intensity of 1.6 mW mm−2. The chopped frequency is 0.1 Hz. d A high-resolution transient photoresponse of the device to illustrate the rise time and decay time constants. In panels (b−d), the gate bias is 0 V and the source-drain bias is 2 V
