Fig. 1
From: Gate tunable giant anisotropic resistance in ultra-thin GaTe
Characterizations of ultra-thin GaTe. a Schematics of GaTe crystal structure, with its in-plane unit cell illustrated in b. c AFM image of a typical GaTe flake of ~ 14 nm in thickness, with its height profile along the green dashed line plotted in d. e Optical image of a typical device (sample S1) made of 14 nm GaTe flake encapsulated in h-BN. Electrodes are patterned with an angle interval of 20 degree. f Same device in e but patterned into a circular shape. Scale bars in e and f are 10 μm. g Source-drain current at Vds = 2 V as a function of angle, with Vg = −80 V. The black solid line is an ellipsoidal fit. Error bars in g are defined as the deviations between experimental data and the fitted line. h Electronic band structure of monolayer GaTe, with the first Brillouin zone plotted in i. j Same data in g plotted after re-normalization in a polar graph
