Fig. 3
From: Gate tunable giant anisotropic resistance in ultra-thin GaTe
Anisotropic ultra-thin GaTe floating gate memory. a, b Optical image and art view of a typical h-BN/GaTe/h-BN device (Sample S6) with a graphite floating gate. Scale bar in a is 10 μm. c, d Memory curves measured along x and y directions, respectively. e Same data in c and d, plotted in log scales, with 10 repeated measurements (indicated by changing the gradient of the green and blue colors). f Retention time of memory at Vg = 0 V, along y and x directions, with on and off positions indicated by the colored circles in e. Vds = 2 V was used in the above measurements
