Fig. 1

Sample structure and selective charge carrier injection. a Brillouin zones of WSe₂ (red) and MoS₂ (blue) illustrating the momentum Q’ arising due to lattice mismatch and misorientation angle. b Schematic illustration of the type-II band alignment for the MoS₂/WSe₂ heterostructures with a middle monolayer hBN spacer. The conduction and valence band of WSe₂ (MoS₂) are represented by red (blue) lines. The hBN layers are represented by gray-shaded rectangles. The black lines depict the quasi Fermi levels in the bottom and top graphene electrodes for an applied voltage above the threshold for hole tunneling into WSe₂ and electron tunneling into MoS₂. The dashed ellipse indicates the formation of an interlayer exciton consisting of an electron in the conduction band of MoS₂ and a hole in the valence band of WSe₂. c Schematic drawing of the heterostructure shown in (b). d Optical microscope image of the active area of device B1