Fig. 2

Device performance. a J−V curves of the PBDB-TF:IT-4X-based devices. b Statistical diagram of PCEs for 100 PBDB-T:BTP-4Cl-based cells. c J−V curves of the devices measured by the NIM, China. d EQE curves of the PBDB-TF:BTP-4X blend cells. e Photo-CELIV curves of the devices for carrier mobility calculations. f Carrier lifetimes under varied light intensities obtained from TPV measurements