Fig. 4
From: Room temperature terahertz semiconductor frequency comb
Power characterizations of mid-IR and THz comb emissions. a Power-current-voltage (PIV) characterizations of the FP and DFB QCL combs with 4-mm long cavity and 9-μm ridge width at room temperature continuous wave operation. b THz power characterization of the DFB QCL comb at room temperature continuous wave operation
