Table 1 Related physical properties of Bi1 − xPbxCuSeO (x = 0–0.2)

From: Complex electronic structure and compositing effect in high performance thermoelectric BiCuSeO

Samples

ρ (g cm−3)

p (1020 cm−3)

μH (cm2 V−1  s−1)

S (μV K−1)

m* (m0)

L (10−8 V2 K−2)

N v

PF (μW cm−1 K−2)

ZT

x = 0

8.74

0.02

10.2

367

0.8

1.50

1

3.1

0.6

x = 0.02

8.72

2.8

4.3

179

3.3

1.66

8

4.8

0.8

x = 0.04

8.68

5.5

4.2

142

5.4

1.75

11

5.9

0.9

x = 0.06

8.49

9.5

3.3

114

5.6

1.86

13

5.7

0.8

x = 0.08

8.64

11.5

4.2

117

6.5

1.84

14

8.1

1.0

x = 0.10

8.38

15.9

3.5

110

6.7

1.87

14

9.3

1.1

x = 0.12

8.37

18.9

3.2

98

6.8

1.92

14

9.0

1.0

x = 0.14

8.23

18.7

3.9

93

7.0

1.96

11.4

1.3

x = 0.16

8.21

18.5

3.8

88

6.6

1.98

10.2

1.1

x = 0.20

8.16

18.5

4.4

72

5.3

2.06

9.5

0.9

  1. The mass density (ρ), hole concentration (p), Hall mobility (μH), Seebeck coefficient (S), density of states (DOS) effective mass (m*), Lorenz constant (L), band degeneracy (Nv) near the Fermi energy (EF) at 300 K, and the power factor (PF) and dimensionless figure of merit (ZT) values at 873 K