Fig. 1 | Nature Communications

Fig. 1

From: Efficient full spin–orbit torque switching in a single layer of a perpendicularly magnetized single-crystalline ferromagnet

Fig. 1

Schematic illustrations of the device structure and the effective magnetic field. a Schematic of SOT switching and illustration of the cross-bar device structure of the Ga0.94Mn0.06As (7 nm)/In0.3Ga0.7As (500 nm)/GaAs (50 nm) thin film grown on a GaAs (001) substrate. The channel width of the cross-bar is 5 μm. The charge current is applied along the +y direction, and the spin component in the −x direction (\({\hat{\mathbf{\sigma}}}\)x) exerts a torque on the magnetic moment (\({\hat{\mathbf{m}}}\)) and reverses it. b Dresselhaus-like (red) and Rashba-like (blue) effective magnetic fields (HD and HR, respectively) for hole momenta along different crystallographic directions in the tensile Ga0.94Mn0.06As thin film. (kx, ky) is the wave vector of the holes. The dark colored arrows labeled HD and HR correspond to the effective magnetic fields when J > 0 in the y direction

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