Fig. 2 | Nature Communications

Fig. 2

From: Proton-assisted creation of controllable volumetric oxygen vacancies in ultrathin CeO2−x for pseudocapacitive energy storage applications

Fig. 2

Mechanism of CeO2−x thin-film deposition. Voltammograms obtained at a scan rate of 300 mV s−1: a 1st cycle. b 25th cycle. c 50th cycle. d Schematic of Ce(OH)4 nanostructure deposited during forward scanning. e Schematic of mixed Ce(OH)4 + CeO2 nanostructure during chemical (non-faradaic) conversion during forward scanning. f Schematic of CeO2−x nanostructure formed during reverse scanning

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