Fig. 5
Schematic for the interlayer epitaxial growth of AB-BLG film on liquid Pt3Si/solid Pt substrate. a The growth of isolated MLG domains in the constant-temperature step. During this process, the excess carbon atoms diffuse through the liquid Pt3Si shell into the solid Pt core. b The formation of a continuous MLG film by merging of the expanded domains. c Interlayer epitaxy of isolated second layer domains underneath the pre-formed MLG during slow-cooling process, through the precipitation of the dissolved carbon atoms in the first step. d The formation of continuous uniform AB-BLG through the expansion and merging of the second layer domains with continuous supply of the dissolved carbon atoms. Insets in (a) and (c) are the schematic cross sections. In (c) and (d), CH4 supply is maintained to prevent H2 etching of the pre-formed MLG
