Fig. 4
Schematic diagrams of the proposed optical modeling. a The device architecture and schematic illustration of the simulation model. The outcoupling efficiency ηout is dependent on the dipole orientation Θ and the position on the sinusoidal interface, emitting wavelength λ, periodicity p, and depth h of the sinusoidal nanostructures. b Normalized steady state electric field for vertical and horizontal dipoles. At wavelengths 430 nm for vertical dipoles (v1–v3) and horizontal dipoles (h1–h3), 510 nm for vertical dipoles (v4–v6), and horizontal dipoles (h4–h6), 610 nm for vertical dipoles (v7–v9) and horizontal dipoles (h7–h9). Three different configurations are presented – flat (first column), nanostructured devices with P = 1000 nm, h = 250 nm (second column) and P = 300 nm, h = 70 nm (third column). Dipoles are located in the middle - between minima and maxima of the sine texture inside corresponding emission layers. All dimensions are in μm
