Fig. 2

Field-effect characteristic of p- and n-doped MoS₂ under different ferroelectric polarization states. a Transfer curves of the MoS₂ device 1 (Dev-1) modulated by Si back-gate measured at a constant source–drain bias V_ds = 1 V. The device is measured in several polarization states including the initial state and after upward (P↑, by a poling voltage V_p = +25 V) and downward (P↓, by V_p = −15 V) ferroelectric polarization. b The corresponding mobility for electrons and holes extracted from field-effect measurements. The decrease of mobility when increasing gate bias for electrons is related to the electron–electron scattering limited mobility in degenerately n-doped MoS₂