Fig. 4
Near structural defect dynamic curvature measured via s-SXDM. a Real-space map of the measured diffraction oscillation amplitude, a white arrow show presence of the fabricated pit in the SiC surface. The expected instantaneous curvature is predicted with a simple phenomenological model including Gaussian focusing and wave periodicity as free parameters. The weak S-shaped connection of the bimodal transverse curvature originates from a small (~2 degree) misalignment of the diffraction plane to the wave propagation direction. b The best fit of the model parameters were then used to subtract the curvature of the unperturbed SAW, allowing visualization of a locally trapped high amplitude wave near the pit (arrow). The spatial step size in a and b is 500 nm, with a 25 nm spot size. c SXDM sketch of the fabricated structural defect with a scattering angle θ = 18 degrees. The surface coordinate scanning in the x–z plane is corrected for sample angle relative to X-ray beam. d Nanoscale imaging near the pit of static strain, or lattice curvature, from the mean x centroid shift. e Dynamic transverse curvature residuals from the rms x centroid shift during stroboscopic imaging with a theoretical SAW model subtracted. A solid and dashed circle represent the upper and lower edges of the pit for reference. The spatial step size in d and e is 50 nm, with a 25 nm spot
