Table 2 Features of various in situ techniques for investigating the switching mechanism
From: Understanding memristive switching via in situ characterization and device modeling
In situ technique | Spatial scale | Temporal scale | Sample type | Information |
|---|---|---|---|---|
In situ TEM100 | Å ~ μm | μs ~ hours | Vertical structure Lateral structure Tip-based structure | Filament morphology Chemical distribution Electronic structure IV measurement |
nm ~ μm | ms ~ hours | Vertical structure | Elemental distribution Chemical state IV measurement | |
In situ EBIC52 | 10 nm ~ 10 μm | ms ~ mins | Vertical structure Lateral structure | Distribution of electric field IV measurement |
In situ STM30 | nm ~ 100 nm | 100 ms ~ days | Tip-based structure | Local electron density IV measurement Cycling |
In situ CAFM42 | 10 nm ~ 10 μm, | 100 ms ~ days | Tip-based structure | Electrochemical reactions IV measurement Cycling |
Å ~ 100 nm | 10 ms ~ days | Vertical structure | Electrochemical kinetics Diffusion activity | |
In situ optical microscopy56 | 100 nm ~ 10 μm | s ~ hours | Lateral structure | Filament morphology Electrochemical reactions |
