Fig. 2
From: Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
Electrical transport properties of the device. a Structure and atomic schematic of the device. S vacancies and isoelectronic Se atoms synergistically serve to introduce expected trap centers in MoS2xSe2(1−x). b IDS–VGS curves under various temperatures. VDS = 1 V. Inset, plot of the current on/off ratios along with temperatures. The corresponding critical temperature (TC), at which the on/off ratio drops, is indicated by the red circle. c Time-resolved current measurement at VGS = −80 V and VDS = 1 V. d The statistics of temperature-dependent on/off ratios (upper panel) and TC (lower panel) of a number of devices with various thicknesses. e The statistics of room temperature field-effect mobilities (μ) obtained from 13 devices. Source data are provided as a Source Data file
