Fig. 3
From: 3/2 fractional quantum Hall plateau in confined two-dimensional electron gas
Gate voltage dependence of the diagonal resistance, the Hall resistance and the two-terminal conductance. a Magnetic field dependence of the diagonal resistance with different gate voltages. b Gate voltage dependence of the diagonal resistance and the Hall resistance at 7.67 T. The gate voltage was changed from −1.3 V to −3.0 V. c Gate voltage dependence of the two-terminal conductance across the single top gate. The gate was annealed at −4.5 V. The conductance was measured at bulk filling factor 5/3. The measurement was carried out by applying a voltage excitation to the source contact and measuring the current from drain contact at the other side of the mesa. The inset is the sketch of the device and the device was made from the same wafer as that used in a. The minimum width of the top gate is 1.5 μm, the same width as that of the gates used in one sample, with which the 3/2 plateau is observed (Supplementary Fig. 2). d Arm gate voltage (Varm) dependence of the diagonal resistance at bulk filling factor 5/3. The confinement gates were annealed at −4.5 V. The arm gate was not annealed. During the measurement the confinement gates were kept at −1.3 V. The inset is the sketch of the device and the device was made from the same wafer as that used in a. The dimension of the confinement is 1 × 2 μm2. All these measurements were performed at 18 mK. Source data are provided as a Source Data file
