Fig. 2
From: Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

Crystal characterization and n–p transition in Mn(SbxBi(1 − x))2Te4. a Single crystal XRD pattern for samples with different antimony substitutions. Scale bar: 5 mm. b EDS curves of the five samples for x = 0 to 0.5. The curves are offset for clarity. c–f ARPES measurements for the samples with different antimony substituting ratio. g, h Measurements of Hall resistivity ρxy as a function of the magnetic field in samples with different values of x at 2 and 30 K, respectively. i Corresponding carrier density of samples with different x derived from the Hall resistivity in e. j Resistivity versus temperature of samples for various values of x