Fig. 5
From: Coulomb-driven single defect engineering for scalable qubits and spin sensors in diamond

Temperature evolution of colour centre population. a Creation yield (ratio of NV density and implanted nitrogen fluence, here 3 × 1011 cm−2) of NV centres measured after the different consecutive annealing steps of 4 h each and for the different doping conditions. The effective yield enhancement between intrinsic and P-doped diamond is of three at 800 °C, whereas it is of ~ 27 at 1000 °C. b Same graph for SnV centres (Sn fluence of 3 × 1011 cm−2). c Same graph for MgV centres (Mg fluence of 3 × 1011 cm−2). The error bars represent the measurement uncertainties derived from the yield formula given in supplementary Equation 3