Fig. 2
From: Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction
Structural morphology analysis of MoS2 FETs with parallel and serial nano-bridge. a Side-view and b top-view field-emission-scanning electron microscope (FE-SEM) images of 25 nm (50 nm pitch) SiO2 line patterns fabricated by a nano-patterning process on multi-layer MoS2 FETs. c High magnification FE-SEM image for the red box area in b. d FE-SEM image (after the removal of SiO2 mask) of multi-heterojunctions after the selective 5 ALE cycles on the multi-layer MoS2 FET patterned with 50 nm pitch SiO2 line nano-patterns. e High magnification FE-SEM image for the blue box area in d. f AFM thickness analysis of the multiple MoS2 mono-/multi-layer heterojunction for the orange box area in e. g 3D AFM image for the green box area in e. h The schematic drawing of MoS2 FETs fabricated with parallel nano-bridge multi-heterojunction [Type (5)] and serial nano-bridge multi-heterojunction [Type (6)]
