Fig. 5
Structure analysis during discharge–charge. a PXRD patterns of the Cu3(HHTP)2 electrode in the pristine, first fully discharged/charged states at a rate of 50 mA g−1, and 500th fully charged states at a rate of 4000 mA g−1. b Scanning transmission electron microscopy (STEM) image of the fully discharged Cu3(HHTP)2 alongside its EDX elemental mapping with respect to C, Cu, O, and Zn, suggesting uniform Zn insertion over the electrode, scale bar: 100 nm. c An LD-HRTEM image of discharged Cu3(HHTP)2 viewed down the [010] zone axis. An inset in (c) shows a magnified area depicting the (100) plane, scale bar: 20 nm. d Measurements of the (100) interplanar distances from the white boxed area in (c) indicate the average d100 = 1.87 nm. e, f SAD patterns from Cu3(HHTP)2 at (e) pristine and (f) discharged states used to confirm the interplanar distances of (100). The arrows and scale bar indicate the [100] direction and 2 nm−1, respectively
