Fig. 7 | Nature Communications

Fig. 7

From: A generalized Stark effect electromodulation model for extracting excitonic properties in organic semiconductors

Fig. 7

p and ∆u vs. thickness of different fitting approaches. The error bar in the x-axis represents the statistical standard deviation ±5 nm of the thickness determined by profilometer. The error bar in the y-axis represents the statistical standard deviation of the possible fitting values. a, b Reflection (R) mode thickness dependence of ∆p and ∆u. c, d Transmission (T) mode thickness dependence of ∆p and ∆u. Analytical ∆k + ∆n represents both the active layer’s electroabsorption and electrorefraction are considered. Analytical ∆k represents only the active layer’s electroabsorption signal is considered

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