Fig. 4
From: Voltage-gated optics and plasmonics enabled by solid-state proton pumping
Switching ratio, reversibility and response time. a Reflectance switching ratio versus wavelength for five devices with different SiO2 thicknesses. The thickness of SiO2 and the color of the device in both states are shown in the legends. b The normalized reflectance of the 408 nm SiO2 sample measured by a 532 nm laser and VG as a function of time. The reflected color can be cycled multiple times reversibly with ratio of ~3. c, d Reflectance of the optical device as a function of time measured by a 532 nm laser, showing the switching transient of a device with 50 nm GdOx, switching from VG = −4 V (c) and from VG = +8 V (d) to the voltages labeled on plots. e, f Reflectance of the optical device with 10 nm GdOx and 400 nm SiO2 measured by a 660 nm laser as a function of time, switching from VG = −3 V (e) and VG = +4 V (f) to the voltages labeled on the plots
