Fig. 3

Printed WSe₂ ReRAM electrical characterization. a Schematic of printed WSe₂ ReRAM with Ag contacts along with microscope image of printed ReRAM. b The device sets from HRS to LRS for both positive and negative voltages. c Stress cycling data for 90 cycles at a smaller set current of 500 nA, where volatile behavior is observed. d Endurance properties of ReRAM at read voltage of 50 mV and a set current of 500 nA. e Set and reset operation with a larger set current of 2 µA, exhibiting non-volatile behavior. f Retention plot showing LRS and HRS stability till 10⁴ s at a read voltage of 50 mV and set current of 5 µA. g Switching time characterization with an AC pulse of 0.7 V amplitude and 1 µs pulse width. h Benchmark plot of switching energy per bit vs. memory window of printed WSe₂ ReRAM with other representative non-volatile resistive switching publications