Fig. 5
From: Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit
Room-temperature electrical characterization of monolayer-base HETs with a perovskite one-dimensional electrical edge contact. a Schematic of the perovskite edge contact fabrication process using a water-soluble and growth-compatible Sr3Al2O6 hard mask layer30. RE (RB) is the emitter (base) radius. b Common-base output characteristics (top) and voltage feedback (bottom), as JE is increased from 0 to 0.2 A cm−2, in 0.05 A cm−2 steps. c Common-emitter output characteristics, as JB is increased from 0 to 0.2 A cm−2, in 0.05 A cm−2 steps. d Common-base transfer characteristics with VCB ranging from 0.0 to 0.6 V, in 0.1 V steps. RE is 9 μm for the devices shown in b through d. e On/off current ratio as a function of VCB ranging from 0.0 to 0.6 V, in 0.1 V steps. Each panel represents a different device. f On/off current ratio averaged over VCB ranging from 0.0 to 0.6 V (top) and common-base current gain α (bottom) for devices shown in e. The red solid line represents α = 0.35, each bar represents a different device, and the error bars represent the standard deviations. The blue, green, and yellow solid bars in e and f represent devices with RE = 40, 20, and 9 μm, respectively. g JC as a function of RE at VCB = 0 V and VEB = −5 V. The error bars represent the standard deviations. The data (red open circles) self-consistently scale with the residual base resistance underneath the emitter as JC ~ 1/RE (red solid line)31.
