Fig. 5: Atomic-resolution scanning transmission electron microscopy imaging.
From: Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits
a High Angle Annular Dark Field (HAADF) scanning transmission electron micrograph (STEM) of the section of a dewetted wire. The original UT-SOI is highlighted by a dashed rectangle. b Blow-up of a (yellow rectangle) highlighting the crystalline structure of the top part of the silicon wire (c-Si) and the native oxide surrounding it (thickness about 2.5 nm). c Blow-up of the bottom-left part of the wire from a (blue rectangle) highlighting its crystalline structure and the presence of some alloy disorder. d Blow up of c (green rectangle) highlighting the alloy disorder.
