Fig. 5: Solar cell performance in devices employing CQD bulk homojunction films. | Nature Communications

Fig. 5: Solar cell performance in devices employing CQD bulk homojunction films.

From: Cascade surface modification of colloidal quantum dot inks enables efficient bulk homojunction photovoltaics

Fig. 5

a Cross-sectional scanning electron microcopy image of CQD bulk homojunction device. b PCE of bulk homojunction devices with different mass ratios of p-type and n-type CQDs. The thickness of the active layer for the n-type CQD devices, p-type CQD devices, and bulk homojunction devices are ~390, 400, and 580 nm, respectively. c Thickness-dependent PCE for bulk homojunction devices and n-type CQD devices (control). Bulk homojunction devices enable the use of much thicker optimized CQD films compared with the case of n-type CQD devices. d Current–voltage characteristics under AM1.5 illumination for n-type CQD device, p-type CQD device, and CQD bulk homojunction device at optimum film thickness. e External quantum efficiency of n-type CQD device and bulk homojunction device at optimum film thickness. The average (symbols) and standard deviation (error bars) are calculated from a sample of six to twelve devices.

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