Fig. 2: NbOx device analysis.
From: An artificial spiking afferent nerve based on Mott memristors for neurorobotics
a Scanning electron micrograph cross-sectional image of the NbOx device. b–f The elemental mapping of the materials in the system for Si, O, Nb, N, and Ti, respectively. g, h Zoom-in views of the channel locations. i The diffraction pattern extracted by Fourier transform of h. j Energy dispersive spectra (EDS) of line scans of the channel. k Two switching cycles under triangular waves with 2.5 V/100 µs ramp rate.
