Fig. 3: Resistance of the device as a function of the phase bias applied on the SQUID and the bias current at three different values of the in-plane field By and three different values of \({V}_{\rm{g}}^{2}\). | Nature Communications

Fig. 3: Resistance of the device as a function of the phase bias applied on the SQUID and the bias current at three different values of the in-plane field By and three different values of \({V}_{\rm{g}}^{2}\).

From: Gate controlled anomalous phase shift in Al/InAs Josephson junctions

Fig. 3

In all scans \({V}_{\rm{g}}^{1}\) is set to −2 V. The dashed orange line indicates the position of the maximum of the oscillation at \({V}_{\rm{g}}^{2}\,=\,-4\ {\rm{V}}\). Orange stars indicate the position of the maximum at each field.

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