Fig. 4: Tuning anomalous phase shift using gate voltage and in-plane magnetic field.
From: Gate controlled anomalous phase shift in Al/InAs Josephson junctions
Evolution of the phase shift in JJ2 as a function of the gate voltage (a) and of the applied in-plane field along y (b). The phase shift Δϕ0 is measured between the oscillations at a given value of \({V}_{\rm{g}}^{2}\) and the ones at −4 V used as reference. In b the solid lines corresponds to linear fits to the measured phase shifts.
