Fig. 6: Irreversible compression over the rolled-up drain and thicker gate dielectric layer.
From: Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability
a The cross-sectional view of the collapsed tube electrode formed by the application of an irreversible compression over the tube electrode. b |JD| vs. VDS of VOFET in which an irreversible compression over the tubular drain electrode was applied. Here, the VOFET consisted of 26 source edges, while tCuPc = 35 nm, W = 0.024 cm, Ageo ≈ 3 × 10−5 cm2, and Aelect ≈ 3 × 10−7 cm2. c The cross-sectional view of rolled-up NM-based VOFET structure in which a 40 nm Al2O3 layer is incorporated. The dotted line indicates the top position of the dielectric layer prior to increasing its thickness. d |JD| vs. VDS of rolled-up NM-based VOFET in which 40 nm Al2O3 layer was utilized. In this case, the transistor also consisted of 26 source edges, while tCuPc = 35 nm, a = 5.5 × 10−5 cm, W = 0.024 cm, Ageo ≈ 1.3 × 10−6 cm2, and Aelect ≈ 1.3 × 10−8 cm2.
