Fig. 5: Photoresponse behavior of 1B-T monitored using lasers with different wavelengths. | Nature Communications

Fig. 5: Photoresponse behavior of 1B-T monitored using lasers with different wavelengths.

From: Directed self-assembly of viologen-based 2D semiconductors with intrinsic UV–SWIR photoresponse after photo/thermo activation

Fig. 5

A Newport Co. Pulseo GKNQL-355-3-30 diode pumped solid-state laser (70 kHz, 39 ns pulse width) and an OPO laser (10 Hz, 10 ns pulse width) are used for 355 nm and 410–2400 nm light, respectively. Powers for each wavelength: 355 nm, 2.1 W; 410 nm, 7.5 mW; 600 nm, 5.0 mW; 800 nm, 15 mW; 1000 nm, 25 mW; 1500 nm, 23 mW; 1800 nm, 22 mW; 2000 nm, 25 mW; 2400 nm, 6.0 mW.

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