Fig. 1: The ML-FinFET with \({W}_{{\rm{fin}}}\) \(\sim\)0.6 nm. | Nature Communications

Fig. 1: The ML-FinFET with \({W}_{{\rm{fin}}}\) \(\sim\)0.6 nm.

From: A FinFET with one atomic layer channel

Fig. 1

a Demonstration of the ML-TMD fin as compared to etched Si-fin and nanotubes in their typical dimensions. b Schematic picture of the ML-FinFET presented in this work. Inset in b shows the several options for depositing the fin materials in this structure. c Schematic of a monolayer MoS\({}_{2}\) crystal growing over a 300 nm height Si step, with the side wall coated by HfO\({}_{2}\). d Scanning electron micrograph (SEM) image of the as-fabricated 300 nm Si step. e SEM morphology of a typical monolayered MoS\({}_{2}\) crystal growing over the 300 nm height step, while the dash red lines highlight the outline of the crystal. Scale bars in d, e are 100 nm and 1 µm, respectively.

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