Fig. 4: Prospects of the ML-FinFETs.
a The simulated carrier statics of 4 nm gate length FinFET at off and on states, the color bar represents the carrier density \(n\) in a log scale. b The simulated field effect curves of 4 nm gate length FinFET at \({V}_{{\rm{DS}}}\) = 0.1 and 1.5 V, respectively. c A time scale evolution of \({W}_{{\rm{fin}}}\). Our current work, marked by the red solid star, brings the \({W}_{{\rm{fin}}}\) to the one atomic layer limit, which in principle cannot be shrunk any further. d False-colored SEM image of an ML-Fin array, with 50 nm pitch and 300 nm fin height. Scale bar in (d) is 300 nm.
