Fig. 4: Tuning Seebeck coefficients with controlled doping. | Nature Communications

Fig. 4: Tuning Seebeck coefficients with controlled doping.

From: In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

Fig. 4

a Seebeck coefficient from a series of doped Te NW samples versus the amount of S2− added to the exchange solution, normalized to the total number of Te atoms present on the surface of the NW. b Representative set of smooth drop-cast films used for the measurements. c Short-term stability tests from a series of Te NW samples with varying doping concentrations. d Long-term stability tests for as-synthesized p-type Te NWs capped with polyvinylpyrrolidone (black) and multiple batches of fully surface exchanged Te NWs with S2− (colors). The data in green is from a sample stored in ambient for nearly 7 months and the data in red is from a device stored in the glove box for 23 months.

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