Fig. 5: Fermi level shifts with doping. | Nature Communications

Fig. 5: Fermi level shifts with doping.

From: In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

Fig. 5

a Schematic cross-section (not to scale) of ion-gel-gated thin-film transistors used to characterize the electrical properties of the doped NWs. The length and width of the channel were 100 μm and 2 mm, respectively. Red and blue circles represent positive and negative ions, respectively. b Energy level diagram depicting the relationship between the location of the Fermi energy (EF), band-edges, doping concentration, and corresponding nature of charge carriers. CB and VB refer to the conduction band and the valence band of Te, respectively. Transfer characteristics for the c undoped Te-PVP NW sample (with VD = 0.1 V) showing p-type transport, d intermediate-doped Te NWs (~1.5% atomic concentration of sulfur, with VD = −0.3 V) showing ambipolar transport. e Heavily doped Te NWs (~2.4% atomic concentration of sulfur, with VD = −1.5 V) showing n-type transport. Black and red curves plot the characteristics on logarithm and linear scales respectively.

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