Table 1 Generalizability of doping approach.

From: In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

Dopant

PVP (Undoped)

Na2S

NaHS

(NH4)2S

K2S

KHS

S (μV/K)

524 (±25)

−307 (±10)

−242 (±15)

−183 (±19)

−232 (±5)

−197 (±13)

σ (S/m)

1.45 (±0.18)

1.25 (±0.14)

1.19 (±0.15)

1.38 (±0.11)

1.09 (±0.2)

0.8 (±0.06)

  1. Seebeck coefficient (S) and electrical conductivity (σ) of ~10-nm diameter Te NW films showcasing the generalizability of the n-doping approach with a broad range of benign sulfur-based dopants.
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