Fig. 3: Interlayer coupling in theory and experiment.
From: Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
a Valence and conduction bands around K-point calculated at the G0W0 level for 2H and 3R stacking, with the energy value of the VB set to 0 in K. b Calculated absorption using G0W0+BSE approach for both stackings, see “Methods” for the computational details. Complete band structures are given in Supplementary Fig. 4. c Schematic of the A- and B-valence bands for 3R bilayers (left) and 2H bilayers (right) as a function of the spin–orbit splitting ΔSO and the interlayer coupling parameter t⊥. d Energy difference between B- and A-exciton for the as-grown (orange), as well as artificially-assembled (black) 2H and 3R MoS2 homobilayers. The error bars represent the standard deviation extracted over 10 different spectra in each case. Gray shaded area is a guide to the eye to underline clear differences between 3R and 2H bilayers.
