Table 1 Valence band splittings, A–B transition energy differences (S) extracted from GW and GW+BSE calculations and the corresponding interlayer coupling parameters.

From: Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition

 

Monolayer

3R-bilayer

2H-bilayer

t⊥

VB splitting

178 (189)

175 (189)

194 (203)

57 (42)

S

185

186

205

43

  1. Values extracted for standard DFT calculations are in parentheses. All values are given in meV.
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