Fig. 4: Reversible flexoresistance effect.
a Topographical image obtained after the experiment. Regions where the experiments were conducted are marked by yellow circles. b Current mapping image on the same area, recorded with a 1-V bias voltage under a constant tip’s loading force of 2 μN, indicating that no current hotspot has been made after the experiment. c Current measured with a 0.1-V bias voltage under two representative loading forces in STO (red symbols), BaTiO3 (blue symbols) and LaAlO3 (green symbols). The lower threshold loading force (i.e., around 12 μN) for BaTiO3 may originate from inherently stronger flexocoupling strength in BaTiO3 (ref. 29), compared with that in STO. During the measurements, we set the current limit (compliance) to 20 nA. Scale bars in (a) and (b) represent 2 μm. Source data are provided as a Source data file.
