Fig. 5: Thin-film transistor (TFT)-driven, vertically stacked full-color organic light-emitting diode (OLED).
a, b, and c For the TFT-driven, full-color OLED with vertically stacked red (R), green (G), and blue (B), structure schematic, unit pixel layout, and equivalent circuit, respectively. d driving TFT transfer characteristics (black solid line) at a VDS of 10 V. The red and black dashed lines indicate the gate-to-source leakage current (IGS) and square-root of drain-to-source current (IDS1/2), respectively. e Current characteristics for TFT-driven full-color OLED with vertically stacked R, G, and B pixels, where VDD = 8 V, Data (R) = 5.9 V, Data (G) = 2.2 V, Data (B) = 6.3 V, and VSS1 = VSS2 = VSS3 = 0 V. The gray dotted lines are the output curves for the driving TFT, at VG = 2.2 V, 5.9 V, and 6.3 V, corresponding to the data voltages. The solid colored lines with closed triangles, circles, and squares show the I–V characteristics for the R, G, and B units, respectively. The solid colored lines with open triangles, circles, and squares show current–luminance characteristics for the R, G, and B units, respectively. f Photographic images of the TFT-driven vertically stacked full-color OLEDs.
