Fig. 1: Determination of temperature change due to applied power in VOx nanowires.
From: Non-thermal resistive switching in Mott insulator nanowires
a SEM image of a V2O3 nanowire contacted by two Ti/Au pads (top and bottom) and schematic of the measurement setup. T0 and Twire are the temperatures of the substrate and the nanowire, respectively, which differ due to the applied power. b Resistance vs. power curves measured above the IMT temperature in the fully metallic state of a V2O3 nanowire at T0 between 169 and 179 K (blue to red). c Resistance vs. Twire (colored lines) derived from b using Eq. (2) with a single fitting parameter κ = 24 μW K−1 for all curves (colored). The black curve shows the resistance vs. stage temperature at equilibrium, Req(T). The horizontal T axis refers both to the stage temperature during the equilibrium (low power) measurement and Twire.
