Fig. 3: Influence of defects on the switching mechanism.
From: Non-thermal resistive switching in Mott insulator nanowires
a Resistance vs. temperature curves of four V2O3 nanowires. Open circles denote T0 for which the R(V) curves shown in b were acquired. b R(V) for each of the nanowires in a with the corresponding color coding. T0 is indicated in the legend. Samples with lower insulating state resistance, R120K, exhibit steeper slopes of log(R) vs. voltage, indicating enhanced carrier generation. For two samples, abrupt resistance jumps associated with the IMT are observed (light blue arrows). c Req(T) before and after focused ion beam irradiation with a dose of 6.2 × 1014 Ga ions cm−2. Open circles denote T0 for which the R(V) curves shown in d were acquired. d R(V) measured in the pristine and irradiated states. Similar to b, the slope of log(R) vs. voltage is considerably steeper in the irradiated state. After the smooth decrease, the resistance reaches 2% of the initial value, Rswitch = 4 MΩ, followed by non-thermal switching with a temperature increase ΔT ~ 2 K. For the pristine state, assuming the same Rswitch = 4 MΩ, an extrapolation of R(V) predicts that switching occurs with over 110 V corresponding to a temperature increase of more than 100 K (inset to d).
